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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP100/D
Plastic Medium-Power Complementary Silicon Transistors
. . . designed for general-purpose amplifier and low-speed switching applications. * High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage -- @ 30 mAdc VCEO(sus) = 60 Vdc (Min) -- TIP100, TIP105 VCEO(sus) = 80 Vdc (Min) -- TIP101, TIP106 VCEO(sus) = 100 Vdc (Min) -- TIP102, TIP107 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc * Monolithic Construction with Built-in Base-Emitter Shunt Resistors * TO-220AB Compact Package *MAXIMUM RATINGS
Rating TIP100, TIP105 60 60 TIP101, TIP106 80 80 TIP102, TIP107 100 100
TIP100 TIP101* TIP102* PNP TIP105 TIP106* TIP107*
*Motorola Preferred Device
NPN
PD, POWER DISSIPATION (WATTS)
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Symbol VCEO VCB VEB IC IB PD E Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 8.0 15 1.0 Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 80 0.64 30 Watts W/_C mJ Watts W/_C Unclamped Inductive Load Energy (1) PD 2.0 0.016 TJ, Tstg - 65 to + 150
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 - 100 VOLTS 80 WATTS
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC RJA
Max
Unit
Thermal Resistance, Junction to Case
1.56 62.5
_C/W _C/W
Thermal Resistance, Junction to Ambient TA TC 4.0 80
CASE 221A-06 TO-220AB
(1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 .
3.0 60 TC 2.0 40
1.0 20 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
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TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
(1) Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) (IC = 8.0 Adc, IB = 80 mAdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cuttoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC MSD6100 USED BELOW IB 100 mA
v 300 s, Duty Cycle v 2%.
Characteristic
TUT
t, TIME ( s)
V2 approx + 8.0 V
V1 approx -12 V
2
tr, tf 10 ns DUTY CYCLE = 1.0% 0
Figure 2. Switching Times Test Circuit
25 s
51
For NPN test circuit reverse all polarities.
for td and tr, D1 is disconnected and V2 = 0
RB
D1
+ 4.0 V
8.0 k 120
VCC - 30 V
SCOPE
TIP105, TIP106, TIP107 TIP100, TIP101, TIP102
TIP100, TIP105 TIP101, TIP106 TIP102, TIP107
TIP100, TIP105 TIP101, TIP106 TIP102, TIP107
TIP100, TIP105 TIP101, TIP106 TIP102, TIP107
0.1 0.07 0.05 0.1
0.3
0.7 0.5
1.0
3.0 2.0
5.0
0.2
Motorola Bipolar Power Transistor Device Data
VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 VCEO(sus) 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) VCE(sat) VBE(on) Symbol ICBO ICEO IEBO td @ VBE(off) = 0 V Cob hFE hfe ts 1000 200 Min 60 80 100 4.0 -- -- -- -- -- -- -- -- -- -- -- -- tf 20,000 -- PNP NPN Max 300 200 2.8 2.0 2.5 8.0 50 50 50 50 50 50 -- -- -- -- tr
Figure 3. Switching Times
5.0 7.0 Adc Adc Unit Vdc Vdc Vdc pF -- -- mAdc 10
TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 D = 0.5
0.2 0.1 0.05 0.02 ZJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk)
t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k
t1
Figure 4. Thermal Response
20 10 IC, COLLECTOR CURRENT (mA) 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 100 s 1 ms dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 10 2.0 5.0 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 5 ms
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown
Figure 5. Active-Region Safe Operating Area
10,000 h fe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc
300 TJ = 25C 200 C, CAPACITANCE (pF) Cob 100 Cib 70 50 PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 30 0.1 0.2 PNP NPN 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
Figure 6. Small-Signal Current Gain
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data
3
TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
NPN TIP100, TIP101, TIP102
20,000 VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 TJ = 150C 25C 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 TJ = 150C 25C - 55C 20,000 VCE = 4.0 V
PNP TIP105, TIP106, TIP107
- 55C
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0 TJ = 25C 2.6
3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A
2.2
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.8
1.4
1.4
1.0 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
20
30
1.0 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
20
30
Figure 9. Collector Saturation Region
3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
3.0 TJ = 25C 2.5
2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250
2.0 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 VCE(sat) @ IC/IB = 250
1.5
1.5
0.5 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
0.5 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. "On" Voltages
4
Motorola Bipolar Power Transistor Device Data
TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
5
TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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6
Motorola Bipolar Power Transistor Device Data
*TIP100/D*
TIP100/D

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